Semiconductor device

  • Inventors: TAIRA KENICHI
  • Assignees: Sony Corp
  • Publication Date: January 14, 1992
  • Publication Number: JP-H0410655-A

Abstract

PURPOSE: To execute an ON-OFF control operation by using a small control voltage by a method wherein heterojunctions are formed respectively between a gate region and semiconductor regions and at least one part of the valence band of an energy band in the gate region is made lower than the conduction band of an energy band in the semiconductor regions. CONSTITUTION: The following are provided: a first semiconductor region 1 and a second semiconductor region 2 which are composed of a first compound semiconductor; and a gate region 3 which is laid between the first and second semiconductor regions 1 and 2 and which is composed of a second compound semiconductor. Heterojunctions J 1 , and J 2 ., of respective types are formed between the gate region 3 and the first and second semiconductor regions 1 and 2. When the impurity concentration and the thickness of the gate region 3 are selected, at least one part of the valence band of an energy band in the gate region 3 is made lower than the conduction band of an energy band in the first and second semiconductor regions 1 and 2. The valence band of the energy band in the gate region 3 is made higher than the conduction band of the energy band in the first and second semiconductor regions 1 and 2 by a voltage which is impressed on the gate region 3. COPYRIGHT: (C)1992,JPO&Japio

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