Semiconductor device and manufacture thereof


PURPOSE: To narrow the width of an inner lead while narrowing the pitch of the inner lead and to realize a multi-pin package while ensuring strength of an outer lead by forming the inner lead of a lead frame about 1/5 to 1/3 times as thick as the outer lead. CONSTITUTION: An inner lead region part 50 is formed by half-etching on the surface central part of a lead frame material board 29. An outer lead 24 is formed by etching on a peripheral part, which is a part excepting of the inner lead region part 50 of the lead frame material board 29 while forming a die pad 22 on the central part to the inner lead region part 30 by etching and forming an inner lead 26 around its central part. Thickness of the inner lead 23 is made thinner than that of the outer lead 24, strength of the thinned inner lead 23 is strengthened by an insulating board 25 so that fine processing to narrow the width of the inner lead 23 can be performed by an etching process. COPYRIGHT: (C)1992,JPO&Japio




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Cited By (6)

    Publication numberPublication dateAssigneeTitle
    JP-H07142522-AJune 02, 1995Nec Corp, 日本電気株式会社Semiconductor device
    US-5796158-AAugust 18, 1998Micron Technology, Inc.Lead frame coining for semiconductor devices
    US-5834831-ANovember 10, 1998Fujitsu LimitedSemiconductor device with improved heat dissipation efficiency
    US-5844779-ADecember 01, 1998Lg Semicon Co., Ltd.Semiconductor package, and semiconductor device using the same
    US-5929513-AJuly 27, 1999Fujitsu LimitedSemiconductor device and heat sink used therein
    US-6057176-AMay 02, 2000Micron Technology, Inc.Lead frame coining for semiconductor devices