PURPOSE: To reduce an effective surface area of a Schottky barrier diode and reduce a memory cell area of a bi-polar RAM by making an anode of the Schottky barrier diode in the form of a slot.
CONSTITUTION: A Schottky barrier diode(SBD) 15 is connected to a P-type base region 7 through a P - -type load resistance region 8. In the region 7, an N + -type emitter regions 9a, 9b and a P + -type base extraction region 10 are formed. The SBD 15, being in the form of a slot, is constituted of an N - -type epitaxial layer 3, SBD anode electrodes 13a, 13b, 13c, and the polycrystal silicon 14 which is to be buried in the slot section. The electrodes 13a, 13b are formed on the side wall of the slot while the electrode 13c is formed on the bottom face of the slot. And, the electrode 13a is connected to the P - -type load resistance region 8. When the total area of the SBD anode electrodes is same as that of the conventional SBD, the exposed area of the SBD 15 is smaller than that of the conventional type and thus the memory cell area of a bi-polar RAM can also be reduced.